VSI013N08MS

Features  N-Channel  Enhancement mode  Very low on-resistance RDS(on) @ VGS=4.5 V  Fast Switching  High conversion efficiency  Pb-free lead plating; RoHS compliant VSI013N08MS 80V/66A N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.5V ID 80 V 10 mΩ 12 mΩ 66 A TO-251 Part ID VSI013N08MS Package Type TO-251 Marking 013N08M Tape and reel information 75pcs/Tube Maximum ratings, at T j=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS IS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain current@VGS=10V IDM EAS Pulse drain current tested ① Avalanche energy, single pulsed ② TC =25°C TC =25°C TC =70°C TC =25°C PD Maximum power dissipation VGS Gate-Source voltage TSTG TJ Storage and operating temperature range Thermal Characteristics TC =25°C Symbol R JC R JA Parameter Thermal Resistance-Junction to Case Thermal Resistance Junction-Ambient Rating 80 60 66 43...