BC327, BC327-16, BC327-25, BC327-40
Amplifier Transistors
PNP Silicon
Features
• These are Pb−Free Devices*
MAXIMUM RAT...
BC327, BC327-16, BC327-25, BC327-40
Amplifier
Transistors
PNP Silicon
Features
These are Pb−Free Devices*
MAXIMUM RATINGS
Rating Collector −Emitter Voltage Collector −Emitter Voltage Emitter−Base Voltage Collector Current − Continuous Total Power Dissipation @ TA = 25°C
Derate above TA = 25°C
Symbol VCEO VCES VEBO
IC PD
Value −45 −50 −5.0 −800 625 5.0
Unit Vdc Vdc Vdc mAdc mW mW/°C
Total Power Dissipation @ TA = 25°C Derate above TA = 25°C
Operating and Storage Junction Temperature Range
PD TJ, Tstg
1.5 12 −55 to +150
W mW/°C
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient RqJA
200 °C/W
Thermal Resistance, Junction−to−Case
RqJC
83.3 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
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COLLECTOR 1
2 BASE
3 EMITTER
TO−92 CASE 29 STYLE 17
123 STRAIGHT LEAD
BULK PACK
12 3
BENT LEAD TAPE & REEL AMMO PACK
MARKING DIAGRAM
BC xxx AYWW G
G
BCxxx = Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering, marking, and shipping information in the package dimensions section on page 4 of this data sheet.
*For additional information on our Pb−Free strategy an...