VSD025NE5MS

Features y N-Channel y Enhancement mode y Very low on-resistance RDS(on) @ VGS=4.5 V y Fast Switching y High conversion efficiency y Pb-free lead plating; RoHS compliant VSD025NE5MS 58V/30A N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=4.5 V ID 58 V 15 mΩ 30 A TO-252 Part ID VSD025NE5MS Package Type TO-252 Marking 025NE5MS Tape and reel information 2500pcs/reel Maximum ratings, at T j=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS IS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain current@VGS=10V IDM EAS Pulse drain current tested ① Avalanche energy, single pulsed ② TC =25°C TC =25°C TC =70°C TC =25°C ID=30A IAS Avalanche energy, single pulsed ② PD Maximum power dissipation VGS Gate-Source voltage TSTG TJ Storage and operating temperature range Thermal Characteristics TC =25°C Symbol Rθ JC Rθ JA Parameter Thermal Resistance-Junction to Case Thermal Resistance Junction-Ambient Rating 58 ...