VSD008N03MS

Features  N-Channel  Enhancement mode  Very low on-resistance RDS(on) @ VGS=4.5 V  Fast Switching  100% Avalanche Tested  Pb-free lead plating; RoHS compliant VSD008N03MS 30V/90A N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.5V ID 30 V 4.0 mΩ 5.0 mΩ 90 A TO-252 Part ID VSD008N03MS Package Type TO-252 Marking 008N03MS Tape and reel information 2500pcs/reel Maximum ratings, at T j=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS IS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain current@VGS=10V IDM Pulse drain current tested ① EAS Avalanche energy, single pulsed ② PD Maximum power dissipation VGS Gate-Source voltage TSTG TJ Storage and operating temperature range Thermal Characteristics TC =25°C TC =25°C TA =70°C TC =25°C ID=16A TA =25°C Symbol R JC R JA Parameter Thermal Resistance-Junction to Case Thermal Resistance Junction-Ambient Rating 30 ...