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VST011N15HS

Vanguard Semiconductor

N-Channel Advanced Power MOSFET

Features y N-Channel y Very low on-resistance y 100% Avalanche Tested y Fast Switching y Repetitive Avalanche Allowed up...


Vanguard Semiconductor

VST011N15HS

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Description
Features y N-Channel y Very low on-resistance y 100% Avalanche Tested y Fast Switching y Repetitive Avalanche Allowed up to Tjmax y Pb-free lead plating; RoHS compliant VST011N15HS 150V/106A N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10 V ID 150 V 9.2 mΩ 106 A TO-220AB Part ID VST011N15HS Package Type TO-220AB Marking 011N15H Tape and reel information 50pcs/Tube Maximum ratings, at T j=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS IS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain current@VGS=10V IDM EAS Pulse drain current tested ① Avalanche energy, single pulsed ② TC =25°C TC =25°C TC =100°C TC =25°C ID=30A IAS Avalanche energy, single pulsed ② PD Maximum power dissipation VGS Gate-Source voltage TSTG TJ Storage and operating temperature range Thermal Characteristics TC =25°C Symbol Rθ JC Rθ JA Parameter Thermal Resistance-Junction to Case Thermal Resistance Junction-Ambient Ratin...




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