N-Channel Advanced Power MOSFET
Features
N-Channel Enhancement mode low on-resistance @ VGS=4.5 V Fast Switching 100% Avalanche test Pb-free...
Description
Features
N-Channel Enhancement mode low on-resistance @ VGS=4.5 V Fast Switching 100% Avalanche test Pb-free lead plating; RoHS compliant
VSD280N15MS
150V/5A N-Channel Advanced Power MOSFET
V DS R DS(on),typ@VGS=10V R DS(on),typ@VGS=4.5V ID
150 V 245 mΩ 240 mΩ
5A
TO-252
Part ID
Package Type
VSD280N15MS
TO-252
Marking 280N15M
Tape and reel information
2500pcs/reel
Maximum ratings, at T j=25 °C, unless otherwise specified
Symbol
Parameter
V(BR)DSS
VGS
Drain-Source breakdown voltage Gate-Source voltage
ID
IDM PD IS EAS TJ TSTG
Continuous drain current@VGS=10V
Pulse drain current tested ① Maximum power dissipation Diode Continuous Forward Current Avalanche energy, single pulsed ③ Maximum Junction Temperature Storage temperature range
TC =25°C TA =100°C TC =25°C TC =25°C TC =25°C ID=2.5A
Thermal characteristics
RJA Thermal Resistance Junction-Ambient RJC Thermal Resistance-Junction to Case
Rating
150 ±20
5 3.2 15 41 5 1.5 175...
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