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VSO045N06MS

Vanguard Semiconductor

N-Channel Advanced Power MOSFET

Features  N-Channel  Enhancement mode  Very low on-resistance RDS(on) @ VGS=4.5 V  Fast Switching  High Effective ...


Vanguard Semiconductor

VSO045N06MS

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Description
Features  N-Channel  Enhancement mode  Very low on-resistance RDS(on) @ VGS=4.5 V  Fast Switching  High Effective  Pb-free lead plating; RoHS compliant; Hg-Free VSO045N06MS 60V/7A N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.5 V ID 60 V 36 mΩ 42 mΩ 7A SOP8 Part ID VSO045N06MS Package Type SOP8 Marking 045N06M Tape and reel information 3000pcs/reel Maximum ratings, at T A=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS IS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain current@VGS=10V IDM Pulse drain current tested ① PD Maximum power dissipation VGS Gate-Source voltage TA =25°C TA =25°C TA =100°C TA =25°C TA =25°C MSL TSTG Storage temperature range TJ Maximum Junction Temperature Thermal Characteristics Symbol Rθ JC Rθ JA Parameter Thermal Resistance-Junction to Case Thermal Resistance Junction-Ambient Rating 60 7 7 4.5 28 1.8 ±20 Level 3 -55 to 175 15...




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