N-Channel Advanced Power MOSFET
Features
N-Channel Enhancement mode Very low on-resistance RDS(on) @ VGS=4.5 V Fast Switching High Effective ...
Description
Features
N-Channel Enhancement mode Very low on-resistance RDS(on) @ VGS=4.5 V Fast Switching High Effective Pb-free lead plating; RoHS compliant; Hg-Free
VSO045N06MS
60V/7A N-Channel Advanced Power MOSFET
V DS R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.5 V ID
60 V 36 mΩ 42 mΩ 7A
SOP8
Part ID VSO045N06MS
Package Type SOP8
Marking 045N06M
Tape and reel information 3000pcs/reel
Maximum ratings, at T A=25 °C, unless otherwise specified
Symbol
Parameter
V(BR)DSS
IS
Drain-Source breakdown voltage Diode continuous forward current
ID Continuous drain current@VGS=10V
IDM Pulse drain current tested ① PD Maximum power dissipation VGS Gate-Source voltage
TA =25°C TA =25°C TA =100°C TA =25°C TA =25°C
MSL
TSTG Storage temperature range TJ Maximum Junction Temperature
Thermal Characteristics
Symbol Rθ JC Rθ JA
Parameter
Thermal Resistance-Junction to Case Thermal Resistance Junction-Ambient
Rating
60 7 7 4.5 28 1.8 ±20 Level 3 -55 to 175 15...
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