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VSD040N04MS Dataheets PDF



Part Number VSD040N04MS
Manufacturers Vanguard Semiconductor
Logo Vanguard Semiconductor
Description N-Channel Advanced Power MOSFET
Datasheet VSD040N04MS DatasheetVSD040N04MS Datasheet (PDF)

Features  N-Channel  Enhancement mode  Very low on-resistance RDS(on) @ VGS=4.5 V  Fast Switching  100% Avalanche Tested  Pb-free lead plating; RoHS compliant; Hg-Free VSD040N04MS 40V/20A N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.5 V ID 40 V 36 mΩ 42 mΩ 20 A TO-252 Part ID VSD040N04MS Package Type TO-252 Marking 040N04M Tape and reel information 2500pcs/reel Maximum ratings, at T j=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS.

  VSD040N04MS   VSD040N04MS


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Features  N-Channel  Enhancement mode  Very low on-resistance RDS(on) @ VGS=4.5 V  Fast Switching  100% Avalanche Tested  Pb-free lead plating; RoHS compliant; Hg-Free VSD040N04MS 40V/20A N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.5 V ID 40 V 36 mΩ 42 mΩ 20 A TO-252 Part ID VSD040N04MS Package Type TO-252 Marking 040N04M Tape and reel information 2500pcs/reel Maximum ratings, at T j=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS IS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain current@VGS=10V IDM Pulse drain current tested ① PD Maximum power dissipation VGS Gate-Source voltage TC =25°C TC =25°C TC =100°C TC =25°C TC =25°C TSTG TJ EAS Storage temperature range Maximum Junction Temperature Avalanche energy, single pulsed ② ID=8A Thermal Characteristics Symbol R JC R JA Parameter Thermal Resistance-Junction to Case Thermal Resistance Junction-.


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