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VSB012N03MS Dataheets PDF



Part Number VSB012N03MS
Manufacturers Vanguard Semiconductor
Logo Vanguard Semiconductor
Description N-Channel Advanced Power MOSFET
Datasheet VSB012N03MS DatasheetVSB012N03MS Datasheet (PDF)

Features  N-Channel  Enhancement mode  Very low on-resistance RDS(on) @ VGS=4.5 V  Fast Switching  100% Avalanche Tested  Pb-free lead plating; RoHS compliant VSB012N03MS 30V/38A N-Channel Advanced Power MOSFET V DS 30 V R @DS(on),TYP VGS=10 V 9 mΩ R @DS(on),TYP VGS=4.5V 12 mΩ I D 38 A TDFN3.3x3.3 Part ID VSB012N03MS Package Type TDFN3.3x3.3 Marking 012N03M Tape and reel information 5000pcs/Reel Maximum ratings, at T j=25 °C, unless otherwise specified Symbol Parameter V(B.

  VSB012N03MS   VSB012N03MS



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Features  N-Channel  Enhancement mode  Very low on-resistance RDS(on) @ VGS=4.5 V  Fast Switching  100% Avalanche Tested  Pb-free lead plating; RoHS compliant VSB012N03MS 30V/38A N-Channel Advanced Power MOSFET V DS 30 V R @DS(on),TYP VGS=10 V 9 mΩ R @DS(on),TYP VGS=4.5V 12 mΩ I D 38 A TDFN3.3x3.3 Part ID VSB012N03MS Package Type TDFN3.3x3.3 Marking 012N03M Tape and reel information 5000pcs/Reel Maximum ratings, at T j=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS IS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain current@VGS=10V IDM EAS Pulse drain current tested ① Avalanche energy, single pulsed ② IAS Avalanche energy, single pulsed ② PD Maximum power dissipation VGS Gate-Source voltage TSTG TJ Storage and operating temperature range Thermal Characteristics Symbol Parameter RJC Thermal Resistance-Junction to Case RJA Thermal Resistance Junction-Ambient TC =25°C TC =25.


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