VSO060N06MD

Features  Dual N-Channel,5V Logic Level Control  Enhancement mode  Very low on-resistance RDS(on) @ VGS=4.5 V  Fast Switching  High conversion efficiency  Pb-free lead plating; RoHS compliant  Green Product VSO060N06MD 60V/5A Dual N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.5 V ID 60 38 45 6 SOP8 V mΩ mΩ A Part ID VSO060N06MD Package Type SOP8 Marking 060N06M Tape and reel information 3000pcs/reel Maximum ratings, at T j=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS IS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain current@VGS=10V IDM Pulse drain current tested ① PD Maximum power dissipation VGS Gate-Source voltage TSTG Storage temperature range TJ Maximum Junction Temperature Thermal Characteristics Symbol Parameter RJC Thermal Resistance-Junction to Case RJA Thermal Resistance Junction-Ambient TC =25°C TC =25°C TC =100°C TC =25°C TC =25°C...