VSE018N03MS

Features  N-Channel，5V Logic Level Control  Enhancement mode  Low on-resistance RDS(on) @ VGS=4.5 V  Fast Switching  100% Avalanche Tested  Pb-free lead plating; RoHS compliant VSE018N03MS 30V/30A N-Channel Advanced Power MOSFET V DS R DS(on),Typ @ VGS=10 V R DS(on),Typ @ VGS=4.5 V ID 30 V 16 mΩ 20 mΩ 30 A PDFN3333 Part ID Package Type VSE018N03MS PDFN3333 Marking 018N03M Tape and reel information 5000pcs/reel Maximum ratings, at T j=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS Drain-Source breakdown voltage ID Continuous drain current@VGS=10V IDM EAS PD VGS Pulse drain current tested ① Avalanche energy, single pulsed ② Maximum power dissipation Gate-Source voltage TC =25°C TC =100°C TC =25°C TC =25°C TSTG Storage and operating temperature range Thermal characteristics Symbol Parameter R JA R JC Thermal Resistance Junction-Ambient Thermal Resistance-Junction to Case Rating 30 30 19 100 11 42 ±20 -55 to 175 Ty...