VSP018N03MD

Features  Dual N-Channel，5V Logic Level Control  Enhancement mode  Low on-resistance RDS(on) @ VGS=4.5 V  Fast Switching  100% Avalanche Tested  Pb-free lead plating; RoHS compliant VSP018N03MD 30V/30A Dual N-Channel Advanced Power MOSFET V DS R DS(on),Typ @ VGS=10 V R DS(on),Typ @ VGS=4.5 V ID 30 V 17 mΩ 23 mΩ 30 A PDFN5x6 Part ID Package Type VSP018N03MD PDFN5x6 Marking 018N03MD Tape and reel information 3000pcs/reel Maximum ratings, at T j=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS Drain-Source breakdown voltage ID Continuous drain current@VGS=10V IDM Pulse drain current tested ① IAS Avalanche current max TC =25°C TC =100°C TC =25°C L=0.5mH EAS PD VGS TSTG Avalanche energy, single pulsed ② Maximum power dissipation Gate-Source voltage Storage and operating temperature range TC =25°C Thermal characteristics Symbol R JA R JC Parameter Thermal Resistance Junction-Ambient Thermal Resistance-Junction to Case Ra...