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VSO007N07MS

Vanguard Semiconductor

N-Channel Advanced Power MOSFET

Features  N-Channel,5V Logic Level Control  Enhancement mode  Very low on-resistance RDS(on) @ VGS=4.5 V  VitoMOS® T...


Vanguard Semiconductor

VSO007N07MS

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Description
Features  N-Channel,5V Logic Level Control  Enhancement mode  Very low on-resistance RDS(on) @ VGS=4.5 V  VitoMOS® Technology  100% Avalanche test  Pb-free lead plating; RoHS compliant VSO007N07MS 80V/17A N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.5 V ID 80 V 8 mΩ 9 mΩ 17 A SOP8 Part ID VSO007N07MS Package Type SOP8 Marking 007N07M Tape and reel information 3000PCS/Reel Maximum ratings, at TA =25°C, unless otherwise specified Symbol Parameter V(BR)DSS IS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain current@VGS=10V IDM EAS PD VGS Pulse drain current tested ① Avalanche energy, single pulsed ② Maximum power dissipation Gate-Source voltage TA =25°C TA =25°C TA =100°C TA =25°C TA =25°C MSL TSTG TJ Storage and operating temperature range Thermal Characteristics Symbol Parameter RθJL Rθ JA Thermal Resistance-Junction to Lead Thermal Resistance-Junction to A...




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