VSO005N06MS

Features  N-Channel，5V Logic Level Control  Enhancement mode  Very low on-resistance RDS(on) @ VGS=4.5 V  Fast Switching  100% Avalanche Tested  Pb-free lead plating；RoHS compliant VSO005N06MS 60V/19A N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.5V ID 60 V 4.5 mΩ 5.3 mΩ 19 A SOP8 Part ID VSO005N06MS Package Type SOP8 Marking 005N06M Tape and reel information 3000pcs/Reel Maximum ratings, at T j=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS IS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain current@VGS=10V IDM EAS PD VGS Pulse drain current tested ① Avalanche energy, single pulsed ② Maximum power dissipation Gate-Source voltage TA =25°C TA =25°C TA =100°C TA =25°C TA =25°C MSL TSTG TJ Storage and operating temperature range Thermal Characteristics Symbol Parameter RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance Junction-Ambie...