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VST012N06MS

Vanguard Semiconductor

N-Channel Advanced Power MOSFET

Features  N-Channel,5V Logic Level Control  Enhancement mode  Very low on-resistance RDS(on) @ VGS=4.5 V  Fast Switc...


Vanguard Semiconductor

VST012N06MS

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Description
Features  N-Channel,5V Logic Level Control  Enhancement mode  Very low on-resistance RDS(on) @ VGS=4.5 V  Fast Switching  100% Avalanche Tested  Pb-free lead plating; RoHS compliant VST012N06MS 60V/55A N-Channel Advanced Power MOSFET V DS 60 V R @DS(on),TYP VGS=10 V 8.4 mΩ R @DS(on),TYP VGS=4.5V 9.8 mΩ I D 55 A TO-220AB Part ID VST012N06MS Package Type TO-220AB Marking 012N06M Tape and reel information 50pcs/Tube Maximum ratings, at T j=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS IS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain current@VGS=10V IDM Pulse drain current tested ① PD Maximum power dissipation VGS Gate-Source voltage TSTG TJ Storage and operating temperature range Thermal Characteristics TC =25°C TC =25°C TC =100°C TC =25°C TC =25°C Symbol R JC R JA Parameter Thermal Resistance-Junction to Case Thermal Resistance Junction-Ambient Drain-Source Avalanche Rati...




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