VS6888BTD

Features  N-Channel，10V Logic Level Control  Enhancement mode  Very low on-resistance RDS(on) @ VGS=10V  VitoMOS® Technology  100% Avalanche test  Pb-free lead plating; RoHS compliant VS6888BTD 65V/88A N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10V ID 65 V 5.3 mΩ 88 A TO-263 Part ID VS6888BTD Package Type TO-263 Marking 6888BTD Tape and reel information 800pcs/Reel Maximum ratings, at T j=25°C, unless otherwise specified Symbol Parameter V(BR)DSS IS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain current@VGS=10V IDM Pulse drain current tested ① PD Maximum power dissipation VGS Gate-Source voltage TSTG TJ Storage and operating temperature range Thermal Characteristics Symbol Parameter RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance Junction-Ambient Drain-Source Avalanche Ratings EAS Avalanche Energy, Single Pulsed ② TC =25°C TC =25°C TC =100°C TC =25°C TC =25°C ...