N-Channel Advanced Power MOSFET
Features
N-Channel,5V Logic Level Control Enhancement mode Very low on-resistance RDS(on) @ VGS=4.5 V Fast Switc...
Description
Features
N-Channel,5V Logic Level Control Enhancement mode Very low on-resistance RDS(on) @ VGS=4.5 V Fast Switching 100% Avalanche test Pb-free lead plating; RoHS compliant
VS3606AP
30V/106A N-Channel Advanced Power MOSFET
V DS R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.5 V ID
30 V 2.0 mΩ 2.9 mΩ 106 A
PDFN5x6
Part ID VS3606AP
Package Type PDFN5x6
Marking 3606AP
Tape and reel information
3000PCS/Reel
Maximum ratings, at TA =25°C, unless otherwise specified
Symbol
Parameter
V(BR)DSS Drain-Source breakdown voltage
VGS Gate-Source voltage
IS Diode continuous forward current ID Continuous drain current @VGS=10V IDM Pulse drain current tested ①
IDSM Continuous drain current @VGS=10V
EAS
Avalanche energy, single pulsed ②
PD
PDSM
Maximum power dissipation
Maximum power dissipation ③
MSL
TSTG TJ
Storage and Junction Temperature Range
Thermal Characteristics
Symbol
Parameter
RJC Thermal Resistance, Junction-to-Case RJA Thermal ...
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