VST013N10MS

Features  N-Channel，5V Logic Level Control  Enhancement mode  Low on-resistance RDS(on) @ VGS=4.5 V  100% Avalanche Tested  Pb-free lead plating; RoHS compliant VST013N10MS 100V/75A N-Channel Advanced Power MOSFET V DS 100 V R @DS(on),TYP VGS=10 V 11 mΩ R @DS(on),TYP VGS=4.5V 12 mΩ I D 75 A TO-220AB Part ID VST013N10MS Package Type TO-220AB Marking 013N10M Tape and reel information 50pcs/Tube Maximum ratings, at T j=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS IS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain current @VGS=10V IDM EAS Pulse drain current tested ① Avalanche energy, single pulsed ② PD Maximum power dissipation VGS Gate-Source voltage TSTG TJ Storage and operating temperature range Thermal Characteristics Symbol Parameter RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient TC =25°C TC =25°C TC =100°C TC =25°C TC =25°C Rating 1...