MMD65R380Q

MMD65R380Q Datasheet MMD65R380Q 650V 0.38Ω N-channel MOSFET  Description MMD65R380Q is power MOSFET using Magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of low EMI to designers as well as low switching loss.  Key Parameters Parameter VDS @ Tj, max RDS(on),max VGS(th), typ ID Qg, typ Value 700 0.38 3 10.6 20.6 Unit V Ω V A nC  Package & Internal Circuit D D G S G S  Features  Low power loss by high speed switching and low on-resistance  100% avalanche tested  Green package – Pb-free plating, Halogen-free  Applications  PFC power supply stages  Switching applications  Adapter  Ordering Information Order Code MMD65R380QRH Marking 65R380Q Temp. Range -55 ~ 150oC Package TO-252 Packing RoHS Status Reel compliant May. 2021. Revision 1.2 1 Magnachip Semiconductor Ltd. MMD65R380Q Datasheet  Absolute Maximum Rating (Tc=25oC unless otherwise specified) Parameter Symbol Rating Unit Note Drain – source voltage Gate – source voltage Continuous drain current Pulsed drain current(1) Power dissipation Single - pulse avalanche energy MOSFET dv/dt ruggedness Diode dv/dt ruggedness(2) Storage temperature Maximum operating junction temperature 1) Pulse width tP limited by Tj,max. 2) ISD ≤ ID, VDS peak ≤ V(BR)DSS. VDSS VGSS ID IDM PD EAS dv/dt dv/dt Tstg Tj 650 ±30 10....