SPI80N06S2L-11

OptiMOS® Power-Transistor Feature N-Channel Enhancement mode Logic Level Automotive AEC Q101 qualified Avalanche rated dv/dt rated P- TO262 -3-1 SPI80N06S2L-11 SPP80N06S2L-11,SPB80N06S2L-11 Product Summary VDS 55 V RDS(on) 11 mΩ ID 80 A P- TO263 -3-2 P- TO220 -3-1 Type Package Ordering Code SPP80N06S2L-11 P- TO220 -3-1 Q67060-S6035 SPB80N06S2L-11 P- TO263 -3-2 Q67060-S6036 SPI80N06S2L-11 P- TO262 -3-1 Q67060-S6181 Marking 2N06L11 2N06L11 2N06L11 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current TC=25°C 1) ID TC=100°C Pulsed drain current TC=25°C Avalanche energy, single pulse ID=80 A , VDD=25V, RGS=25Ω Repetitive avalanche energy, limited by Tjmax2) Reverse diode dv/dt ID puls EAS EAR dv/dt IS=80A, VDS=44V, di/dt=200A/µs, Tjmax=175°C Gate source voltage Power dissipation VGS Ptot TC=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Tj , Tstg Val...