IPD06N03LZG

OptiMOS®2 Power-Transistor Features Ideal for high-frequency dc/dc converters Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R DS(on) product (FOM) Superior thermal resistance 175 °C operating temperature Pb-free lead plating; RoHS compliant IPD06N03LZ G IPS06N03LZ G IPU06N03LZ G Product Summary V DS R DS(on),max (SMD Version) ID 25 V 5.0 mΩ 50 A Type IPD06N03LZ IPS06N03LZ IPU06N03LZ Package Marking P-TO252-3-11 06N03LZ P-TO251-3-11 06N03LZ P-TO251-3-21 06N03LZ Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=25 °C2) T C=100 °C Pulsed drain current I D,pulse T C=25 °C3) Avalanche energy, single pulse E AS I D=45 A, R GS=25 Ω Reverse diode dv /dt dv /dt I D=50 A, V DS=20 V, di /dt =200 A/µs, T j,max=175 °C Gate source voltage4) V GS Power dissipation P tot T C=25 °C Operating and storage tempera...