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BD245B

Power Innovations Limited

NPN SILICON POWER TRANSISTORS

BD245, BD245A, BD245B, BD245C NPN SILICON POWER TRANSISTORS Copyright © 1997, Power Innovations Limited, UK JUNE 1973 - ...


Power Innovations Limited

BD245B

File Download Download BD245B Datasheet


Description
BD245, BD245A, BD245B, BD245C NPN SILICON POWER TRANSISTORS Copyright © 1997, Power Innovations Limited, UK JUNE 1973 - REVISED MARCH 1997 q Designed for Complementary Use with the BD246 Series 80 W at 25°C Case Temperature B SOT-93 PACKAGE (TOP VIEW) 1 q q q q 10 A Continuous Collector Current 15 A Peak Collector Current Customer-Specified Selections Available E 3 Pin 2 is in electrical contact with the mounting base. MDTRAA C 2 absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING BD245 Collector-emitter voltage (RBE = 100 Ω) BD245A BD245B BD245C BD245 Collector-emitter voltage (IC = 30 mA) BD245A BD245B BD245C Emitter-base voltage Continuous collector current Peak collector current (see Note 1) Continuous base current Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) Unclamped inductive load energy (see Note 4) Operating junction temperature range Storage temperature range Lead temperature 3.2 mm from case for 10 seconds NOTES: 1. 2. 3. 4. V EBO IC ICM IB Ptot Ptot ½LIC 2 Tj Tstg TL VCEO VCER SYMBOL VALUE 55 70 90 115 45 60 80 100 5 10 15 3 80 3 62.5 -65 to +150 -65 to +150 250 V A A A W W mJ °C °C °C V V UNIT This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%. Derate linearly to 150°C case temperature at the rate of 0.64 W/°C. Derate linearly to 150°C free air temperature at the rate of 24 mW/°C. This rating is based on the...




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