Document
BD243B, BD243C (NPN), BD244B, BD244C (PNP)
Complementary Silicon Plastic Power Transistors
These devices are designed for use in general purpose amplifier and switching applications.
Features
• High Current Gain Bandwidth Product • These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter Voltage BD243B, BD244B BD243C, BD244C
VCEO
80 100
Vdc
Collector−Base Voltage BD243B, BD244B BD243C, BD244C
VCB Vdc 80
100
Emitter−Base Voltage
Collector Current − Continuous
Collector Current − Peak Base Current
Total Device Dissipation @ TC = 25°C Derate above 25°C
VEB 5.0 Vdc
IC 6 Adc
ICM 10 Adc
IB 2.0 Adc
PD 65 W 0.52 W/°C
Operating and Storage Junction Temperature Range
TJ, Tstg −65 to +150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
TH.