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BD244C Dataheets PDF



Part Number BD244C
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Complementary Silicon Plastic Power Transistors
Datasheet BD244C DatasheetBD244C Datasheet (PDF)

BD243B, BD243C (NPN), BD244B, BD244C (PNP) Complementary Silicon Plastic Power Transistors These devices are designed for use in general purpose amplifier and switching applications. Features • High Current Gain Bandwidth Product • These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage BD243B, BD244B BD243C, BD244C VCEO 80 100 Vdc Collector−Base Voltage BD243B, BD244B BD243C, BD244C VCB Vdc 80 100 Emitter−Base Voltage Col.

  BD244C   BD244C


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BD243B, BD243C (NPN), BD244B, BD244C (PNP) Complementary Silicon Plastic Power Transistors These devices are designed for use in general purpose amplifier and switching applications. Features • High Current Gain Bandwidth Product • These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage BD243B, BD244B BD243C, BD244C VCEO 80 100 Vdc Collector−Base Voltage BD243B, BD244B BD243C, BD244C VCB Vdc 80 100 Emitter−Base Voltage Collector Current − Continuous Collector Current − Peak Base Current Total Device Dissipation @ TC = 25°C Derate above 25°C VEB 5.0 Vdc IC 6 Adc ICM 10 Adc IB 2.0 Adc PD 65 W 0.52 W/°C Operating and Storage Junction Temperature Range TJ, Tstg −65 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. TH.


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