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BD243B/BD243C BD244B/BD244C
COMPLEMENTARY SILICON POWER TRANSISTORS
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STMicroelectronics PREFERRED SALESTYPES
DESC...
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BD243B/BD243C BD244B/BD244C
COMPLEMENTARY SILICON POWER
TRANSISTORS
s
STMicroelectronics PREFERRED SALESTYPES
DESCRIPTION The BD243B and BD243C are silicon Epitaxial-Base
NPN transistors mounted in Jedec TO-220 plastic package. They are inteded for use in medium power linear and switching applications. The complementary
PNP types are BD244B and BD244C respectively. TO-220
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INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter
NPN PNP V CBO V CEO V EBO IC I CM IB P t ot T stg Tj Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current Base Current Total Dissipation at Tc ≤ 25 C Storage T emperature Max. O perating Junction Temperature
o
Value BD243B BD244B 80 80 5 6 10 2 65 -65 to 150 150 BD243C BD244C 100 100
Uni t
V V V A A A W
o o
C C
For
PNP types voltage and current values are negative.
September 1999
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BD243B / BD243C / BD244B / BD244C
THERMAL DATA
R t hj-ca se R t hj- amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 1.92 62.5
o o
C/W C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol I CES I CEO I EBO Parameter Collector Cut-off Current (V BE = 0) Collector Cut-off Current (I B = 0) Emitter Cut-off Current (I C = 0) Test Cond ition s V CE = rated V CEO V CE = 60 V V EB = 5 V I C = 30 mA for BD243B/BD244B for BD243C/BD244C IC = 6 A IC = 6 A I C = 0.3 A IC = 3 A I C = 0.5 A I C = 0.5 A IB...