AOTF42S60

AOTF42S60 600V 39A a MOS TM Power Transistor General Description Product Summary The AOTF42S60 has been fabricated using the advanced aMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability this device can be adopted quickly into new and existing offline power supply designs. VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V 100% UIS Tested 100% Rg Tested 700V 166A 0.099W 40nC 9.2mJ Top View D TO-220F G S GD AOTF42S60 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol AOTF42S60 AOTF42S60L Drain-Source Voltage VDS 600 Gate-Source Voltage VGS ±30 Continuous Drain Current TC=25°C TC=100°C ID 39* 39* 25* 25* Pulsed Drain Current C IDM 166 Avalanche Current C IAR 11 Repetitive avalanche energy C EAR 234 Single pulsed avalanche energy G EAS 1345 TC=25°C Power Dissipation B Derate above 25oC MOSFET dv/dt ruggedness Peak diode recovery dv/dt H PD dv/dt 50 37.9 0.4 0.3 100 20 Junction and Storage Temperature Range TJ, TSTG -55 to 150 Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds J TL 300 Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D Symbol RqJA AOTF42S60 AOTF42S60L 65 65 Maximum Junction-to-Case RqJC 2.5 3.3 * Drain current limited by maximum junction temperature. S Units V V A A mJ mJ W W/ oC V/ns °C °C ...