CEP9926

CEP9926/CEB9926 N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 20A,RDS(ON) = 30mΩ @VGS = 4.5V. RDS(ON) = 40mΩ @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID IDM PD 20 ±8 20 70 50 0.4 Operating and Store Temperature Range TJ,Tstg -65 to 150 Units V V A A W W/ C C Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 2.5 62.5 Units C/W C/W 2001.October 4 - 186 http://www.cetsemi.com CEP9926/CEB9926 Electrical Characteristics Tc = 25 C unless ot...