CET3301
P-Channel Enhancement Mode Field Effect Transistor
FEATURES
-30V, -7.3A, RDS(ON) = 35mΩ @VGS = -10V. RDS(ON) = 53mΩ @VGS = -4.5V.
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. SOT-223 package.
D
DS D
G
SOT-223
G
S
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherw...
