CER3402
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
30V, 6.2A, RDS(ON) = 40mΩ @VGS = 10V. RDS(ON) = 57mΩ @VGS = 4.5V.
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. DIP-8 Package.
DD D D 8 7 65
5
DIP-8
1
1 234 S SSG
ABSOLUTE MAXIMUM RATINGS TA = 25 C unl...
