BD136

DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D100 BD136; BD138; BD140 PNP power transistors Product specification Supersedes data of 1997 Mar 26 1999 Apr 12 Philips Semiconductors Product specification PNP power transistors FEATURES High current (max. 1.5 A) Low voltage (max. 80 V). APPLICATIONS General purpose power applications, e.g. driver stages in hi-fi amplifiers and television circuits. DESCRIPTION PNP power transistor in a TO-126; SOT32 plastic package. NPN complements: BD135, BD137 and BD139. 3 PINNING PIN 1 2 BD136; BD138; BD140 DESCRIPTION emitter collector, connected to metal part of mounting surface base handbook, halfpage 2 3 1 1 2 3 Top view MAM272 Fig.1 Simplified outline (TO-126; SOT32) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO BD136 BD138 BD140 VCEO collector-emitter voltage BD136 BD138 BD140 VEBO IC ICM IBM Ptot Tstg Tj Tamb emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tmb ≤ 70 °C open collector open base − − − − − − − − −65 − −65 −45 −60 −80 −5 −1.5 −2 −1 8 +150 150 +150 V V V V A A A W °C °C °C PARAMETER collector-base voltage CONDITIONS open emitter − − − −45 −60 −100 V V V MIN. MAX. UNIT 1999 Apr 12 2 Philips Semiconductors Product specification PNP power transistors THERMAL CHARACTERISTICS SYMBOL Rth j-a Rth j-mb Note 1. Refer ...