Document
REPLACEMENT TYPE : MMBTA55
FEATURES Driver Transistors
HABTA55(PNP)
GENERAL PURPOSE TRANSISTOR
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Parameter
Symbol Value
Collector-Base Voltage
VCBO
-60
Collector-Emitter Voltage
VCEO
-60
Emitter-Base Voltage
VEBO
-4
Collector Current-Continuous IC -500
Collector Power Dissipation
PC 225
Thermal Resistance Junction to Ambient RθJA
Junction Temperature
TJ
556 150
Storage Temperature
Tstg -55~+150
Unit
V V V mA mW °C/W °C °C
SOT-23 MARKING:2H 1:BASE 2:EMITTER 3:COLLECTOR
ELECTRICAL CHARACTERISTICS (TA= 25°C unless otherwise noted)
Parameter
Symbol Test conditions
Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage
VCBO VCEO
IC=-100μA,IE=0 IC=-1mA,IB=0
Emitter-Base Breakdown Voltage
VEBO
IE=-100uA,IC=0
Collector Cut-off Current Collector Cut-off Current
ICBO ICEO
VCB=-60V,IE=0 VCE=-60V, IB=0
DC Current Gain Collector-Emitter Saturation Voltage
hFE(1) hFE(2) VCE(sat)
VCE=-1V,I.