Document
REPLACEMENT TYPE : MMBTA28
FEATURES
Darlington Amplifier
HABTA28(NPN)
GENERAL PURPOSE TRANSISTOR
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Parameter
Symbol Value
Unit
Collector-Base Voltage
VCBO
80 V
Collector-Emitter Voltage
VCEO
80 V
Emitter-Base Voltage
VEBO
12 V
Collector Current-Continuous IC 500 mA
Collector Power Dissipation
PC 200 mW
Thermal Resistance Junction to Ambient RθJA
625 °C/W
Junction Temperature
TJ 150 °C
Storage Temperature
Tstg -55to +150 °C
ELECTRICAL CHARACTERISTICS (TA= 25°C unless otherwise noted)
Parameter
Symbol Test conditions
Collector-Base Breakdown Voltage
VCBO
IC=100μA,IE=0
Collector-Emitter Breakdown Oltage
VCEO
IC=100μA,IB=0
Emitter-Base Breakdown Voltage
VEBO
IE=10uA,IC=0
Collector Cut-off Current
ICBO
VCB=60V,IE=0
Collector Cut-off current
ICES VCE=60V, VBE=0
Emitter Cut-off Current
IEBO VEB=10V,IC=0
DC Current Gain
hFE(1) hFE(2)
VCE=5V,IC=10mA VCE=5V,IC=100mA
Collector-Emitter Satura.