HABTA05

REPLACEMENT TYPE : MMBTA05 FEATURES  Driver Transistor HABTA05(NPN) GENERAL PURPOSE TRANSISTOR MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Parameter Symbol Value Collector-Base Voltage VCBO 60 Collector-Emitter Voltage VCEO 60 Emitter-Base Voltage VEBO 4 Collector Current-Continuous IC 500 Collector Power Dissipation PC 300 Thermal Resistance Junction to Ambient RθJA 417 Junction Temperature TJ 150 Storage Temperature Tstg -55 to +150 Unit V V V mA mW °C/W °C °C SOT-23 MARKING:1H 1: BASE 2:EMITTER 3: COLLECTOR ELECTRICAL CHARACTERISTICS (TA= 25°C unless otherwise noted) Parameter Symbol Test conditions Min Typ Max Unit Collector-Base Breakdown Voltage VCBO IC=100μA,IE=0 60 V Collector-Emitter Breakdown Voltage VCEO IC=1mA,IB=0 60 V Emitter-Base Breakdown Voltage VEBO IE=100uA,IC=0 4 V Collector Cut-off Current ICBO VCB=60V,IE=0 0.1 μA Collector Cut-off Current ICEO VCE=60V, IB=0 0.1 μA Emitter Cut-off Current IEBO ...