REPLACEMENT TYPE : MMBT2222A
FEATURES Epitaxial Planar Die Construction Complementary PNP Type available(HABT2907A)
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REPLACEMENT TYPE : MMBT2222A
FEATURES Epitaxial Planar Die Construction Complementary
PNP Type available(HABT2907A)
HABT2222A(
NPN)
SWITCHING
TRANSISTOR
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Collector-Base Voltage
VCBO
75 V
Collector-Emitter Voltage
VCEO
40 V
Emitter-Base Voltage
VEBO
6V
Collector Current-Continuous IC 600 mA
Collector Power Dissipation
PC
Thermal Resistance Junction to Ambient RθJA
300 mW 417 °C /W
Junction Temperature
TJ 150 °C
Storage Temperature
Tstg -55 to +150 °C
SOT-23 1: BASE 2:EMITTER 3: COLLECTOR
ELECTRICAL CHARACTERISTICS (TA= 25°C unless otherwise noted)
Parameter
Symbol Test conditions
Collector-Base Breakdown Voltage
VCBO
IC=10μA,IE=0
Collector-Emitter Breakdown Voltage
VCEO
IC=10mA,IB=0
Emitter-Base Breakdown Voltage
VEBO
IE=10uA,IC=0
Collector Cut-off Current
ICBO
VCB=60V,IE=0
Collector cut-off current
ICEX
VCE=30V,VBE(off)=3V
Emitter Cut-off Current
IEBO
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