Document
BCX70 Series
Small Signal Transistor (NPN)
TO-236AB (SOT-23)
.122 (3.1) .110 (2.8) .016 (0.4) 3 .056 (1.43) .052 (1.33)
Top View
P w Ne
c u d ro
t
Mounting Pad Layout
0.037 (0.95) 0.037 (0.95)
1
2 max. .004 (0.1)
Pin Configuration 1 = Base 2 = Emitter 3 = Collector
.007 (0.175) .005 (0.125)
.037(0.95) .037(0.95)
0.079 (2.0) 0.035 (0.9)
.045 (1.15) .037 (0.95)
0.031 (0.8)
.016 (0.4)
.016 (0.4)
.102 (2.6) .094 (2.4)
Dimensions in inches and (millimeters)
Dimensions in inches and (millimeters)
Mechanical Data
Case: SOT-23 Plastic Package Weight: approx. 0.008g Marking BCX70G = AG Code: BCX70H = AH BCX70J = AJ BCX70K = AK Packaging Codes/Options: E8/10K per 13” reel (8mm tape), 30K/box E9/3K per 7” reel (8mm tape), 30K/box
Features
• NPN Silicon Epitaxial Planar Transistors for switching and AF amplifier applications. • Suited for low level, low noise, low frequency applications in hybrid circuits. • Low current, low voltage. • As complementary types, BCX71 Series PNP transistors are recommended.
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Peak Base Current Power Dissipation Thermal Resistance Junction to Ambient Air Junction Temperature Storage Temperature Range
Note: (1) Mounted on FR-4 printed-circuit board.
Symbol VCBO VCEO VEBO IC IB Ptot RΘJA Tj TS
Value 45 45 5.0 200 50 250 500
(1)
Unit V V V mA mA mW °C/W °C °C
150 –65 to +150
11/10/00
BCX70 Series
Small Signal Transistor (NPN)
Electrical Characteristics (T
Parameter BCX70G BCX70H BCX70J BCX70K BCX70G BCX70H BCX70J BCX70K BCX70G BCX70H BCX70J BCX70K
J
= 25°C unless otherwise noted)
Symbol
Test Condition VCE = 5 V, IC = 10 µA VCE = 5 V, IC = 10 µA VCE = 5 V, IC = 10 µA VCE = 5 V, IC = 10 µA VCE = 5 V, IC = 2 mA VCE = 5 V, IC = 2 mA VCE = 5 V, IC = 2 mA VCE = 5 V, IC = 2 mA VCE = 1 V, IC = 50 mA VCE = 1 V, IC = 50 mA VCE = 1 V, IC = 50 mA VCE = 1 V, IC = 50 mA IC = 10 mA, IB = 0.25 mA IC = 50 mA, IB = 1.25 mA IC = 10 mA, IB = 0.25 mA IC = 50 mA, IB = 1.25 mA VCE = 5 V, IC = 2 mA VCE = 5 V, IC = 10 µA VCE = 1 V, IC = 50 mA VCB = 45 V, VBE = 0 V VCB = 45 V, VBE = 0 V TA = 150°C VEB = 4 V, IC = 0 VCE = 5 V, IC = 10 mA f = 100 MHz VCB = 10 V, f = 1 MHz, IE = 0 VEB = 0.5 V, f = 1 MHz, IC = 0 VCE = 5 V, IC = 200 µA, RS = 2 kΩ, f = 1 kHz, B = 200 Hz VCE = 5 V, IC = 2 mA, f = 1.0 kHZ VCC = 10 V, IC = 10 mA, IB(on) = -IB(off) = 1 mA VCC = 10 V, IC = 10 mA, IB(on) = -IB(off) = 1 mA
Min — 30 40 100 120 180 250 380 50 70 90 100 50 100 600 700 550 — — — — — 100 — — — — — — — — —
Typ — — — — — — — — — — — — — — — — 650 520 780 — — — 250 2.5 8 2 200 260 330 520 85 480
Max — — — — 220 310 460 630 — — — — 350 550 850 1050 750 — — 20 20 20 — — — 6
Unit
DC Current Gain
hFE
—
Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage
VCEsat VBEsat
mV mV
Base-Emitter Voltage
VBE
mV nA µA nA MHz pF pF dB
Collector Cut-off Current Emitter Cut-off Current Gain-Bandwidth Product Collector-Base Capacitance Emitter-Base Capacitance Noise Figure BCX70G BCX70H BCX70J BCX70K
ICBO IEBO fT CCBO CEBO F
Small Signal Current Gain
hfe
Turn-on Time at RL = 990Ω (see fig. 1) Turn-off Time at RL = 990Ω (see fig. 1)
ton toff
150 800
ns ns
BCX70 Series
Small Signal Transistor (NPN)
Ratings and Characteristic Curves
Fig. 1 Switching Waveforms
INPUT 10%
90%
t on
t off
10% 90% OUTPUT 10%
td tr ts tf
90%
.