BCW60, BCX70
NPN Silicon AF Transistors
For AF input stages and driver applications High current gain Low collect...
BCW60, BCX70
NPN Silicon AF
Transistors
For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BCW61, BCX71 (
PNP)
3
2 1
VPS05161
Type BCW60A BCW60B BCW60C BCW60D BCW60FF BCW60FN BCX70G BCX70H BCX70J BCX70K
Marking AAs ABs ACs ADs AFs ANs AGs AHs AJs AKs 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B
Pin Configuration 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C
Package SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23
1
Jan-29-2002
BCW60, BCX70
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage
DC collector current Peak collector current Peak base current Total power dissipation , TS = 71 °C Junction temperature Storage temperature
Symbol VCEO VCBO VEBO
IC ICM IBM Ptot Tj Tstg
BCW60 32 32 5
BCW60FF BCX70 32 32 5
100 200 200 330 150 -65 ... 150
Unit V
45 45 5
mA
mW °C
Thermal Resistance Junction - soldering point 1) RthJS
240
K/W
Unit max. V
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IB = 0 Emitter-base breakdown voltage IE = 1 µA, IC = 0
1For calculation of R thJA please refer to Application Note Thermal Resistance
typ.
V(BR)CEO 32 45 V(BR)CBO 32 45 V(BR)EBO 5 -
BCW60/60FF BCX70
BCW60/...