BCX70G

DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D088 BCX70 series NPN general purpose transistors Product specification Supersedes data of 1997 Mar 14 1999 Apr 15 Philips Semiconductors Product specification NPN general purpose transistors FEATURES Low current (max. 100 mA) Low voltage (max. 45 V). APPLICATIONS General purpose switching and amplification. DESCRIPTION NPN transistor in a SOT23 plastic package. PNP complements: BCX71 series. MARKING TYPE NUMBER BCX70G BCX70H BCX70J BCX70K Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. Fig.1 MARKING CODE(1) AG∗ AH∗ AJ∗ AK∗ Top view handbook, halfpage BCX70 series PINNING PIN 1 2 3 base emitter collector DESCRIPTION 3 3 1 2 1 2 MAM255 Simplified outline (SOT23) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C CONDITIONS open emitter open base open collector − − − − − − − −65 − −65 MIN. MAX. 45 45 5 100 200 200 250 +150 150 +150 V V V mA mA mA mW °C °C °C UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. 1999 Apr 15 2 PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 VALUE 500 UNIT K...