w w w. c e n t r a l s e m i . c o m
CP302-MPSH10
NPN - RF Transistor Die
50mA, 25 Volt
The CP302-MPSH10 is a silicon ...
w w w. c e n t r a l s e m i . c o m
CP302-MPSH10
NPN - RF
Transistor Die
50mA, 25 Volt
The CP302-MPSH10 is a silicon
NPN RF
transistor designed for low noise UHF/VHF amplifier and high output oscillator applications.
MECHANICAL SPECIFICATIONS:
Die Size
14.5 x 14.5 MILS
B
Die Thickness
9.0 MILS
Base Bonding Pad Size
2.3 x 2.3 MILS
Emitter Bonding Pad Size 2.5 x 2.3 MILS
Top Side Metalization
Al – 30,000Å
E
Back Side Metalization
Au – 18,000Å
Wafer Diameter
4 INCHES
Gross Die Per Wafer
53,730
BACKSIDE COLLECTOR R2
MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Operating and Storage Junction Temperature
SYMBOL VCBO VCEO VEBO IC TJ, Tstg
30 25 3.0 50 -65 to +150
UNITS V V V mA °C
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
ICBO
VCB=25V
IEBO
VEB=2.0V
BVCBO
IC=100µA
30
BVCEO
IC=1.0mA
25
BVEBO
IE=10µA
3.0
VCE(SAT) IC...
