BCX69

SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 2 – FEBRUARY 1995 7 FEATURES * High gain and low saturation voltages COMPLEMENTARY TYPE – PARTMARKING DETAIL – BCX68 BCX69 – CJ BCX69-16 – CG BCX69-25 – CH BCX69 C E C B SOT89 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at T amb=25°C Operating and Storage Temperature Range SYMBOL V CBO V CEO V EBO I CM IC P tot T j:T stg VALUE -25 -20 -5 -2 -1 1 -65 to +150 UNIT V V V A A W °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Collector-Base Breakdown voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio SYMBOL V (BR)CBO V (BR)CEO V (BR)EBO I CBO I EBO V CE(sat) V BE(on) 50 85 60 BCX69-16 100 BCX69-25 160 fT C obo 100 25 h FE MIN. -25 -20 -5 -0.1 -10 -10 -0.5 -1.0 TYP. MAX. UNIT V V V µA µA µA V V CONDITIONS. IC =-100 µ A IC =-10mA I E =-100 µ A V CB =-25V V CB =-25V, T amb =150°C V EB =-5V I C =-1A, I B =-100mA I C =-1A, V CE =-1V IC IC IC IC IC MHz pF =-5mA, V CE =-1V =-500mA, V CE =-1V =-1A, V CE =-1V* =-500mA, V CE =-1V* =-500mA, V CE =-1V 375 250 250 400 Transition Frequency Output Capacitance I C =-100mA, V CE =-5V, f=100MHz V CB =-10V, f=1MHz *Measured under pulsed conditions. Pulse...