BCX38B

NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS ISSUE 1 – MARCH 94 FEATURES * 60 Volt VCEO * Gain of 10K at IC=0.5 Amp * Ptot=1 Watt BCX38A/B/C C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg 80 60 10 2 E-Line TO92 Compatible VALUE UNIT V V V A mA W °C 800 1 -55 to +200 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Sustaining Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Turn-on Voltage Static Forward Current Transfer Ratio BCX38A BCX38B BCX38C SYMBOL V(BR)CBO VCEO(sus) V(BR)EBO ICBO IEBO VCE(sat) VBE(on) hFE 500 1000 2000 4000 5000 10000 3-20 MIN. 80 60 10 100 100 1.25 1.8 TYP. MAX. V V V nA nA V V UNIT CONDITIONS. IC=10µ A, IE=0 IC=10mA, IB=0 IE=10µ A, IC=0 VCB=60V, IE=0 VEB=8V, IC=0 IC=800mA, IB=8mA* IC=800mA, VCE=5V* IC=100mA, VCE=5V* IC=500mA, VCE=5V* IC=100mA, VCE=5V* IC=500mA, VCE=5V* IC=100mA, VCE=5V* IC=500mA, VCE=5V* BCX38A/B/C TYPICAL CHARACTERISTICS IC/IB=100 1.0 1.6 -55°C +25°C 0.6 +100°C 0.4 +175°C +100°C VCE=5V 0.8 hFE - Normalised Gain 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 1 10 -55°C +25°C VCE(sat) - (Volts) 0.2 0.001 0.01 0.1 1 10 IC - Collector Current (Amp...