BCX17

DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D088 BCX17; BCX18 PNP general purpose transistors Product specification Supersedes data of 1997 Feb 28 1999 May 31 Philips Semiconductors Product specification PNP general purpose transistors FEATURES High current (max. 500 mA) Low voltage (max. 45 V). APPLICATIONS Saturated switching and driver applications e.g. for industrial service Thick and thin-film circuits. DESCRIPTION PNP transistor in a SOT23 plastic package. NPN complement: BCX19. PINNING PIN 1 2 3 base emitter collector BCX17; BCX18 DESCRIPTION handbook, halfpage 3 3 1 MARKING 2 TYPE NUMBER BCX17 BCX18 Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. MARKING CODE(1) T1∗ T2∗ Top view 1 2 MAM256 Fig.1 Simplified outline (SOT23) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO BCX17 BCX18 VCEO collector-emitter voltage BCX17 BCX18 VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 open collector open base − − − − − − − −65 − −65 −45 −25 −5 −500 −1 −200 250 +150 150 +150 V V V mA A mA mW °C °C °C PARAMETER collector-base voltage CONDITIONS open emitter − − −50 −30 V V MIN. MAX. UNIT 1999 May 31 2 Philips Semiconductors Product specifica...