NCE65TF130T

NCE65TF130T N-Channel Super Junction Power MOSFET Ⅲ General Description The series of devices use advanced trench gate super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications. Features ●Optimized body diode reverse recovery performance ●Low on-resistance and low conduction losses ●Small package ●Ultra Low Gate Charge cause lower driving requirements ●100% Avalanche Tested ●ROHS compliant VDS RDS(ON)TYP ID 650 V 110 mΩ 28 A Application ● Power factor correction（PFC） ● Switched mode power supplies(SMPS) ● Uninterruptible Power Supply（UPS） ● LLC Half-bridge Schematic diagram  Intrinsic fast-recovery body diode Package Marking And Ordering Information Device Device Package Marking NCE65TF130T TO-247 NCE65TF130T Table 1. Absolute Maximum Ratings (TC=25℃) Parameter Symbol...