BCW68GLT1

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BCW68GLT1/D General Purpose Transistor PNP Silicon COLLECTOR 3 1 BASE 2 EMITTER BCW68GLT1 3 1 2 MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Symbol VCEO VCBO VEBO IC Value –45 –60 –5.0 –800 Unit Vdc Vdc Vdc mAdc CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB) DEVICE MARKING BCW68GLT1 = DH THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RθJA PD 556 300 2.4 RθJA TJ, Tstg 417 – 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = –10 mAdc, IB = 0) Collector–Emitter Breakdown Voltage (IC = –10 µAdc, VEB = 0) Emitter–Base Breakdown Voltage (IE = –10 µAdc, IC = 0) Collector Cutoff Current (VCE= –45 Vdc, IE = 0) (VCE= –45 Vdc, IB = 0, TA = 150°C) Emitter Cutoff Current (VEB = –4.0 Vdc, IC = 0) 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina V(BR)CEO V(BR)CES V(BR)EBO ICES — — IEBO — — — — –20 –10 –20 nAdc µAdc nAdc –45 –60 –5.0 — — — — — — Vdc Vdc Vdc Thermal Clad is a trademark of the ...