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BCW68G

Fairchild Semiconductor

PNP Amplifier

BCW68G — PNP General-Purpose Amplifier March 2014 BCW68G PNP General-Purpose Amplifier Description This device is desi...


Fairchild Semiconductor

BCW68G

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Description
BCW68G — PNP General-Purpose Amplifier March 2014 BCW68G PNP General-Purpose Amplifier Description This device is designed for general-purpose amplifier and switching applications at currents to 500 mA. Sourced from process 63. C E SOT-23 Mark: DG B Ordering Information Part Number BCW68G Marking DG Package SOT-23 3L Packing Method Tape and Reel Absolute Maximum Ratings(1),(2) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol Parameter Value Unit VCEO VCBO VEBO IC TJ , TSTG Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Junction and Storage Temperature Range -45 -60 -5 -800 -55 to +150 V V V mA °C Notes: 1. These ratings are based on a maximum junction temperature of 150°C. 2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or low-duty-cycle operations. © 1997 Fairchild Semiconductor Corporation BCW68G Rev. 1.1.0 1 www.fairchildsemi.com BCW68G — PNP General-Purpose Amplifier Thermal Characteristics(3) Values are at TA = 25°C unless otherwise noted. Sy...




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