BCW66H

BCW66 SMALL SIGNAL NPN TRANSISTORS Type BCW66F BCW 66G BCW 66H s Marking EF EG EH s s s SILICON EPITAXIAL PLANAR NPN TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS MEDIUM CURRENT AF AMPLIFICATION AND SWITCHING PNP COMPLEMENT IS BCW68 2 3 1 SOT-23 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CES V CEO V EBO IC I CM IB P t ot T stg Tj Parameter Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Base Current Total Dissipation at T c = 25 C Storage Temperature Max. O perating Junction Temperature o Value 75 45 5 0.8 1 0.1 360 -65 to 150 150 Uni t V V V A A A mW o o C C October 1997 1/4 BCW66 THERMAL DATA R t hj-amb R th j-SR Thermal Resistance Junction-Ambient Thermal Resistance Junction-Substrate Max Max 375 278 o o C/W C/W Mounted on a ceramic substrate area = 0.7 mm x 2.5 cm2 ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CES I EBO Parameter Collector Cut-off Current (V BE = 0) Collector Cut-off Current (IE = 0) Test Cond ition s V CE = Rated V CES V CE = Rated V CES V EB = 4 V I C = 10 mA 45 V V I C = 10 µ A 75 V V I C = 10 µ A 5 V T amb = 150 oC Min. Typ . Max. 20 20 20 Un it nA µA nA V ( BR)CEO ∗ Collector-Emitter Breakdown Voltage (I B = 0) V (BR)CES ∗ Collector-Emitter Breakdown Voltage (V EB = 0) V (BR)EBO Emitter-Base Breakdown Voltage (I C = 0) Collector-Emitter Satura...