BCW65C

BCW 65, BCW 66 NPN General Purpose Transistors NPN Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage Power dissipation – Verlustleistung 2.9 ±0.1 0.4 3 250 mW SOT-23 (TO-236) 0.01 g 1.1 Plastic case Kunststoffgehäuse 1.3 ±0.1 Type Code 1 2 2.5 max Weight approx. – Gewicht ca. Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle 1.9 Dimensions / Maße in mm 1=B 2=E 3=C Maximum ratings (TA = 25/C) Collector-Emitter-voltage Collector-Base-voltage Emitter-Base-voltage Power dissipation – Verlustleistung Collector current – Kollektorstrom (DC) Peak Collector current – Kollektor-Spitzenstrom Base current – Basis-Spitzenstrom Peak Base current – Basis-Spitzenstrom Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur B open E open C open VCE0 VCB0 VEB0 Ptot IC ICM IB IBM Tj TS Grenzwerte (TA = 25/C) BCW 65 32 V 60 V 5V 250 mW 1) 800 mA 1000 mA 100 mA 200 mA 150/C - 65…+ 150/C BCW 66 45 V 75 V Characteristics (Tj = 25/C) Min. Collector-Base cutoff current – Kollektorreststrom IE = 0, VCB = 32 V IE = 0, VCB = 32 V, Tj = 150/C IE = 0, VCB = 45 V IE = 0, VCB = 45 V, Tj = 150/C IC = 0, VEB = 4 V BCW 65 BCW 66 ICB0 ICB0 ICB0 ICB0 IEB0 – – – – – Kennwerte (Tj = 25/C) Typ. – – – – – Max. 20 nA 20 :A 20 nA 20 :A 20 nA Emitter-Base cutoff current – Emitterreststrom 1 ) Mounted on P.C. bo...