Document
http://www.ncepower.com
Pb Free Product
NCE4525
N and P-Channel Enhancement Mode Power MOSFET
Description
The NCE4525 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.
General Features
● N-Channel VDS = 40V,ID =7A RDS(ON) < 24mΩ @ VGS=10V RDS(ON) < 38mΩ @ VGS=4.5V
N-channel
P-channel
Schematic diagram
● P-Channel VDS = -40V,ID = -5A RDS(ON) < 38mΩ @ VGS=-10V RDS(ON) <50mΩ @ VGS=-4.5V
● High power and current handing capability ● Lead free product is acquired ● Surface mount package
Marking and pin assignment
Package Marking and Ordering Information
SOP-8 top view
Device Marking Device
Device Package Reel Size
Tape width
NCE4525
NCE4525
SOP-8
Ø330mm
12mm
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Quantity
2500 units
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drai.