NCE15P25J

http://www.ncepower.com Pb Free Product NCE15P25J NCE P-Channel Enhancement Mode Power MOSFET Description The NCE15P25J uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =-150V,ID =-25A RDS(ON) <135mΩ @ VGS=-10V （Typ.=120mR） RDS(ON) <160mΩ @ VGS=-10V （Typ.=131mR） ● Super high dense cell design ● Advanced trench process technology ● Reliable and rugged ● High density cell design for ultra low On-Resistance Schematic diagram Application ● Portable equipment and battery powered systems Marking and pin assignment 100% UIS TESTED! 100% ∆Vds TESTED! TO-220-3L top view Package Marking and Ordering Information Device Marking Device Device Package NCE15P25J NCE15P25J TO-220-3L Reel Size Tape width Quantity Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS ...