NCE60P50K

http://www.ncepower.com Pb Free Product NCE60P50K NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P50K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features ● VDS =-60V,ID =-50A RDS(ON) <28mΩ @ VGS=-10V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation Schematic diagram Application ● Load switch 100% UIS TESTED! 100% ∆Vds TESTED! Marking and pin assignment TO-252-2L top view Package Marking and Ordering Information Device Marking Device Device Package NCE60P50K NCE60P50K TO-252-2L Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drai...