NCE30P20Q

http://www.ncepower.com Pb Free Product NCE30P20Q NCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P20Q uses advanced trench technology to provide excellent RDS(ON), low gate charge . This device is suitable for use as a load switch or in PWM applications. General Features ● VDS = -30V,ID = -20A RDS(ON) < 25mΩ @ VGS=-4.5V RDS(ON) < 15mΩ @ VGS=-10V ● High Power and current handing capability ● Lead free product is acquired ● Surface mount package Schematic diagram Application ● PWM applications ● Load switch ● Power management Marking and pin assignment Package Marking and Ordering Information Device Marking NCE30P20Q Device NCE30P20Q Device Package DFN3.3X3.3 Reel Size Ø330mm Tape width 12mm Quantity 2500 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Continuous(TC=100℃) Drain Current-Pulsed (Note 1) Maximum Power Dissipation Ope...