BCW33

DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D088 BCW31; BCW32; BCW33 NPN general purpose transistors Product specification Supersedes data of 1997 Jan 29 1999 Apr 13 Philips Semiconductors Product specification NPN general purpose transistors FEATURES Low current (100 mA) Low voltage (32 V). APPLICATIONS General purpose switching and amplification. DESCRIPTION NPN transistors in a plastic SOT23 package. PNP complements: BCW29 and BCW30. MARKING TYPE NUMBER BCW31 BCW32 BCW33 Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. MARKING CODE(1) D1∗ D2∗ D3∗ Top view handbook, halfpage BCW31; BCW32; BCW33 PINNING PIN 1 2 3 base emitter collector DESCRIPTION 3 3 1 2 1 2 MAM255 Fig.1 Simplified outline (SOT23) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C CONDITIONS open emitter open base; IC = 2 mA open collector − − − − − − − −65 − −65 MIN. MAX. 32 32 5 100 200 200 250 +150 150 +150 V V V mA mA mA mW °C °C °C UNIT 1999 Apr 13 2 Philips Semiconductors Product specification NPN general purpose transistors THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit. CHARACTER...